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Semiconducting materials which can be ambipolarly doped are highly desir-
able in many electronics applications, including use as solar cell materials.
SnZrS3 is being investigated for the possibility of ambipolar doping, with
potential applications as a solar cell absorber layer. This dissertation covers
the synthesis of SnZrS3 and the related compound Sn2S3, as well as measure-
ments of the optical bandgap, Seebeck coeffcient, and resistivity of pressed
powder pellets for these materials. A reproducible synthesis method by solid
state reaction of the elements is developed for SnZrS3. Bandgaps of 1.16-1.21
eV and 1.14-1.15 eV are found for SnZrS3 and Sn2S3 respectively. SnZrS3
is found to be natively p-type with a Seebeck coeffcient of +600-700 mVV/K.
Pressed pellet resistivities of 13 Mohmcm for SnZrS3 and 216 kohmcm for Sn2S3
are measured. Preliminary doping studies are also carried out.